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AlGaN/GaN HEMT能帶工程和界面調(diào)制AlGaN/GaN HEMT energy band engineering and interface modulation胡衛(wèi)國(guó)中國(guó)科學(xué)院北京納米能源與系統(tǒng)研究所研究員HU WeiguoProfessor of Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences

4H-SiC MOSFET中界面碳團(tuán)簇的形成和遷移率退化機(jī)理Interfacial Carbon Cluster Formation and Mobility Degradation in 4H-SiC MOSFETs張召富武漢大學(xué)工業(yè)科學(xué)研究院研究員ZHANG ZhaofuProfessor of The Institute of Technological Sciences, Wuhan University