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MPCVD法金剛石同質(zhì)外延生長及MOS器件技術Homogeneous epitaxial diamond growth by MPCVD and its MOS device technology張金風西安電子科技大學教授ZHANG JinfengProfessor of Xidian University

金剛石微波功率器件進展Progress in Diamond Microwave Power Devices馮志紅中國電科首席科學家、中國電科13所研究員、專用集成電路國家級重點實驗室常務副主任FENG ZhihongHebei Semiconductor Research lnstitute

NiO/Ga2O3異質(zhì)結(jié)二極管中深能級陷阱和載流子輸運機制Correlation of deep-level traps and carrier transport mechanisms in NiO/Ga2O3 heterojunction diodes汪正鵬南京大學Zhengpeng WangNanjing University

MgO（100）上生長柱狀納米晶b-Ga2O3外延薄膜及其高靈敏度日盲探測器研究Columnar-nanodomained epitaxial b-Ga2O3 thin films on MgO(100) for solar-blind photodetectors with exceedingly high sensitivity何云斌湖北大學教授HE YunbinProfessor of Hubei University

Ga2O3光電二極管的可控制備及應用Controllable Fabrication and Application of Ga2O3 Photodiodes盧紅亮復旦大學微電子學院教授LU HongliangProfessor of Fudan University

超寬禁帶六方氮化硼二維原子晶體及其光電器件Growth of ultra-wide band-gap two-dimensional hexagonal boron nitride for optoelectronic devices張興旺中國科學院半導體所研究員ZHANG XingwangProfessor of Institute of Semiconductors, Chinese Academy of Sciences

超高熱導率立方砷化硼和氮化硼晶體Cubic boron arsenide and boron nitride crystals with ultrahigh thermal conductivity 宋柏北京大學工學院特聘研究員SONG BaiProfessor of Peking University

利用泵浦-探測瞬態(tài)反射顯微技術測定立方砷化硼的高雙極性遷移率High Ambipolar Mobility in Cubic Boron Arsenide（BAs）Revealed by Transient Reflectivity Microscopy劉新風國家納米科學中心研究員,中科院納米標準與檢測重點實驗室副主任LIU XinfengProfessor of National Nanoscience Center, Deputy director of the Key Laboratory of Standardizaiton and Characteriaziton of the Chinese Academy of Sciences

氧化鎵異質(zhì)結(jié)功率晶體管Gallium Oxide Heterogeneous and Heterojunction Power Transistors韓根全西安電子科技大學教授HAN GenquanProfessor of Xidian University

新型寬禁帶壓電半導體材料-Ga2O3及其在射頻諧振器中的應用-Ga2O3: an Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators王鋼中山大學佛山研究院院長，中山大學半導體照明材料及器件國家地方聯(lián)合工程實驗室主任、教授WANG GangProfessor and Dean of Foshan Institute of Sun Yat-Sen University; Director of the National-Local Joint Engineering Laboratory of Semiconductor

面向柔性和垂直電子器件的外延氧化鎵薄膜Epitaxial Ga2O3 thin film membrane for flexible and vertical electronics李曉航沙特阿卜杜拉國王科技大學副教授（陸義代講）LI XiaohangAssociate Professor at King Abdullah University of ScienceTechnology

氧化鎵功率器件耐壓和功率優(yōu)值的研究Research on Voltage Withstandand Power Optimum Value of Ga2O3 Power Devices張進成西安電子科技大學副校長、教授（團隊代講）

氮化鎵及碳化硅紫外探測器技術與產(chǎn)業(yè)化應用陸海鎵敏光電董事長、南京大學教授LU HaiProfessor of Nanjing University

全球產(chǎn)業(yè)鏈頂級智囊匯聚蘇州 共議第三代半導體產(chǎn)業(yè)新風向第八屆國際第三代半導體論壇暨第十九屆中國國際半導體照明論壇在蘇州盛大召開2月8日，第八屆國際第三代半導體論壇（IFWS）第十九屆中國國際半導體照明論壇（SSLCHINA）在蘇州盛大開幕。在這場被視為全球第三代半導體行業(yè)風向標的盛會上，大會主席、全國政協(xié)教科衛(wèi)體委員會副主任、科技部原副部長曹健林，中國科學院院士、浙江大學教授楊德仁，中國科學院院士、南昌大學副校

Micro-LED 顯示產(chǎn)業(yè)化進展與挑戰(zhàn)秦鋒天馬微電子集團研發(fā)中心總經(jīng)理、Micro-LED研究院院長QIN FengGeneral Manager of the RD Center and President of Institute of Micro-LED, Tianma Microelectronics Co., Ltd.

寬禁帶半導體助推電動汽車進程Wide Bandgap Devices Empower Vehicle Electrification李道會--蔚來汽車功率半導體設計團隊負責人、高級總監(jiān)

Is WBG a Game Changer for Power Electronics IndustryFred LEE美國弗吉尼亞理工大學的大學特聘教授、美國工程院院士、美國國家發(fā)明家院士、中國工程院外籍院士Fred LEEDistinguished Professor Emeritus at Virginia Tech, USA; Member of the National Academy of Engineering (USA), Member of National Academy of Inventors (USA), Foreign Member of Chinese Academy of Engineering

SiC功率MOSFET技術及應用進展柏松中國電子科技集團首席專家、寬禁帶半導體電力電子器件國家重點實驗室主任BAI SongChief Scientist of China Electronics Technology Group Corporation, Director of National Key Laboratory of Wide Bandgap Semiconductor Power Electronic Devices

In pursuit of short wavelength solid state light emitter天野浩日本名古屋大學未來材料與系統(tǒng)研究所教授、日本工程院院士、美國工程院院士、中國工程院外籍院士、２０１４年諾貝爾物理獎獲得者Hiroshi AMANOProfessor of Nagoya University, Japan, Member of The Engineering Academy of Japan, Member of the National, Academy of Engineering, Academician of Chinese Academy of Engineering, Laureate of the Nobel Prize

基于氮化鎵的CRM圖騰柱PFC整流器的無傳感器電流過零檢測技術王浩宇上?？萍即髮W信息學院長聘副教授、研究員WANG HaoyuAssociate Professor of ShanghaiTech University