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實現(xiàn)超小型全氮化微型LED的納米級材料科學Nanometer-scale Materials Science Enabling Ultra-small All-Nitride Micro-LEDsLarsSAMUELSON瑞典皇家科學院及工程院兩院院士、中國科學院外籍院士、瑞典德隆大學教授、南方科技大學講席教授LarsSamuelsonMember of Royal Swedish Academy of Engineering, Member of Royal Swedish Academy of Sciences，F(xiàn)oreign Member of the Chinese Academy of Sciences, Professor of Lund Univer

基于大失配外延的氮化物第三代半導體材料與器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大學理學部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University

半導體材料產(chǎn)業(yè)的現(xiàn)狀和挑戰(zhàn)Status and Challenge of Semiconductor Material Industry楊德仁中國科學院院士、浙大寧波理工學院校長、浙江大學硅及先進半導體材料全國重點實驗室主任、教授YANG DerenAcademician of Chinese Academy of Sciences,President of NingboTech University, Professor and Director of State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University

基于納米壓印全生態(tài)產(chǎn)業(yè)平臺的微納光學器件制造Manufacturing of Micro and Nano Optical Devices Based on Nanoimprint Eco-industrial Platform羅剛材料科學姑蘇實驗室研究員、蘇州新維度微納科技有限公司創(chuàng)始人LUO GangProfessor of Gusu Lab, Founderof NDnano

GaN基光電材料外延與MOCVD反應(yīng)腔結(jié)構(gòu)關(guān)聯(lián)性研究Research on the Correlation Between GaN-based Optoelectronic Material Epitaxy and MOCVD Reactor Chamber Structure姚威振中國科學院半導體研究所副研究員、中科重儀半導體聯(lián)合創(chuàng)始人YAO WeizhenAssociate Professor of Institute of Semiconductors, Chinese Academy of Sciences, Co-founder of CASInstruments Semiconductor Co., Ltd.

硅襯底GaN基光電材料外延生長Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孫錢中國科學院蘇州納米技術(shù)與納米仿生研究所研究員SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

氮化鋁基半導體材料及器件的最新進展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基礎(chǔ)研究實驗室負責人、資深杰出研究員Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation

氮化鋁單晶材料研究進展與應(yīng)用展望Research Progress and Application Prospect of AlN Single Crystal Materials程紅娟中國電子科技集團第四十六所新材料研發(fā)中心副主任CHENG HongjuanDeputy Director of New Materials Research and Development Center of CETC 46THInstitute

第四代半導體材料平坦化研究進展Research Progress on Planarization of Fourth Generation Semiconductor Materials趙志強北京艾姆希半導體科技有限公司銷售總監(jiān)ZHAO ZhiqiangSales Director of MCF Technologies Ltd.

氧化鎵材料和電子器件的熱特性Thermal Characteristics of Ga2O3Materials and Electronic Devices孫華銳哈爾濱工業(yè)大學（深圳）教授，理學院副院長SUN HuaruiProfessor of Harbin Institute of Technology, Shenzhen

電流/功率截止頻率為135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鵬山東大學新一代半導體材料研究院研究員CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University

無等離子體損傷GaN HEMT極化隔離的設(shè)計與優(yōu)化Design and optimization of polarization isolation toward plasma-damage-free GaN HEMT戴貽鈞中國科學院寧波材料技術(shù)與工程研究所DAI YiyunNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences

全色顯示材料與3D芯片集成技術(shù)Integrated technology of panchromatic display materials and 3D chips范謙東南大學下一代半導體材料研究所研究員

基于HfZrO2與b-Ga2O3異質(zhì)結(jié)的高性能自驅(qū)動日盲紫外光探測器P-Type SnO2 Fabrication and Construction of SnO2 Homojunction UV Photodetector黎明鍇湖北大學材料科學與工程學院教授LIMingkaiProfessor of Hubei University

微米級氧化鎵厚膜的載流子定向輸運與深紫外光電探測Directional carrier transport in micrometer-thick gallium oxide films for high-performance deep-ultraviolet photodetection張文瑞中科院寧波材料所研究員Zhang WenruiProfessor Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences

新型寬禁帶壓電半導體材料-Ga2O3及其在射頻諧振器中的應(yīng)用-Ga2O3: an Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators王鋼中山大學佛山研究院院長，中山大學半導體照明材料及器件國家地方聯(lián)合工程實驗室主任、教授WANG GangProfessor and Dean of Foshan Institute of Sun Yat-Sen University; Director of the National-Local Joint Engineering Laboratory of Semiconductor

背光模組中Mini LED對封裝材料的要求與挑戰(zhàn)Requirements and Challenges for Packaging Materials for Mini LEDs used in Backlight Modules徐建軍北京康美特科技股份有限公司首席技術(shù)官Jianjun XUCTO of Beijing KMT Technology Co., Ltd.

用于先進SiC功率模塊的整體解決（核心設(shè)備/材料/工程）方案Overall solution (core equipment/materials/engineering) for advanced SiC power module周鑫蘇州博湃半導體技術(shù)有限公司市場銷售總監(jiān)ZHOU XinDirector of Sales Marketing, Suzhou Bopai Semiconductor Technology Co., Ltd.

高性能GaN-on-GaN材料與器件的外延生長High output power and bandwidth of c-plane GaN-on-GaN micro-LED for high-speed visible light communication王國斌江蘇第三代半導體研究院研發(fā)部負責人WANG GuobinSenior Project ManagerHead of RD Dept of Jiangsu Institute of Advanced Semiconductors

平片藍寶石襯底上高質(zhì)量AlN材料MOCVD外延生長High quality AlN growth on flat sapphire at relative low temperature by MOCVD趙德剛中國科學院半導體所研究員ZHAO DegangProfesor of Institute of Semiconductors, CAS