面向AR微顯示應(yīng)用的超小尺寸氮化物Micro-LED研究Study on ultra-small III-nitride Micro-LEDs for AR applications汪萊清華大學(xué)信息電子工程系光電子研究所所長WANG LaiInstitute of Information Optoelectronic Technology, Department of Electronic Engineering, Tsinghua University
藍(lán)寶石襯底InGaN基紅色LED及MicroLEDInGaN based red LEDs and MicroLEDs on sapphire substrate王新強(qiáng)北京大學(xué)教授、北大東莞光電研究院院長WANG XinqiangDean of Dongguan Institute of Opto-electronics, Peking University
High-Bandwidth Deep Ultra-Violet Micro-LEDs for Optical Wireless CommunicationsJonathan MCKENDRY英國斯特斯克萊德大學(xué)Jonathan MCKENDRYFraunhofer Fellow, Institute of Photonics, University of Strathclyde, UK
SiC MOSFET熱阻精確測量技術(shù)研究Research on the technique of accurately measuring thermal resistance of SiC MOSFET劉奧中國電子科技集團(tuán)公司第五十五研究所LIU AONanjing Electronics Research Institute
4H-SiC MOSFET中界面碳團(tuán)簇的形成和遷移率退化機(jī)理Interfacial Carbon Cluster Formation and Mobility Degradation in 4H-SiC MOSFETs張召富武漢大學(xué)工業(yè)科學(xué)研究院研究員ZHANG ZhaofuProfessor of The Institute of Technological Sciences, Wuhan University
Condura.ultraTM無銀AMB氮化硅基板---車規(guī)級(jí)功率模塊用高性價(jià)比解決方案Condura.ultraTM silver free AMB --- cost-effective solution for automotive power module張靖賀利氏電子中國區(qū)研發(fā)總監(jiān)ZHANG JingDirector of Innovation China, Heraeus Electronics
GaN HEMT與SIC MOSFET在戶用儲(chǔ)能PCS方向應(yīng)用優(yōu)勢Advantages in household energy storage PCS using GaN HEMT and SiC MOSFET https://fanyi.baidu.com/?aldtype=85孔令濤--南京芯干線科技有限公司市場總監(jiān)
SiC等離子體波脈沖功率器件與應(yīng)用研究Research on 4H-SiC Plasma Wave Pulsed Power Devices and its Applications孫樂嘉西安電子科技大學(xué)副教授SUN LejiaAssociate Professor of Xidian University
面向功率器件的高性能AlN陶瓷基板High Performance AlN Ceramic Substrate for Power Devices梁超江蘇博睿光電股份有限公司副總經(jīng)理LIANG ChaoDeputy General Manager of Jiangsu Bree Optronics Co., Ltd
電熱應(yīng)力下碳化硅功率MOSFET損傷的多尺度探測表征方法Multi-scale Detection and Characterization of SiC Power MOSFET Damage under Electro-thermal Stress劉斯揚(yáng)東南大學(xué)教授LIU SiyangProfessor of Southeast University
比電阻3.3毫歐.平方厘米的1200伏14毫歐SiC MOSFET1200V 14mohm SiC MOSFET with Rsp,on of 3.3mohm.cm^2雷光寅復(fù)旦大學(xué)副研究員LEI GuangyinAssociate Professor of Fudan University
等離子刻蝕技術(shù)在第三代化合物半導(dǎo)體領(lǐng)域的應(yīng)用Application of Plasma Etching Technology in the Third-generation Compound Semiconductor Field謝秋實(shí)北京北方華創(chuàng)微電子裝備有限公司 第一刻蝕事業(yè)部副總經(jīng)理XIE QiushiDeputy General Manager of NAURA Technology Group Co., Ltd.
SiC功率器件制造裝備技術(shù)及發(fā)展趨勢Technology and development trends of SiC power devices manufacturing equipment鞏小亮中國電子科技集團(tuán)公司第四十八研究所、半導(dǎo)體裝備研究部主任Xiaoliang GONGDirector of Semiconductor equipment research department, The 48th Research Institute of China Electronics Technology Group Corporation
6500V SiC MOSFET器件研制及電力電子變壓器工程應(yīng)用Development of 6500V SiC MOSFET Devices and Engineering Application of Solid State Transformers楊霏北京智慧能源研究院功率半導(dǎo)體所副總師
Physical Modeling of Charge Trapping Effects in SiC MOSFETsTibor GRASSER奧地利維也納工業(yè)大學(xué)微電子研究所所長、教授Tibor GRASSERProfessor and Head of the Institute for Microelectronics at Technische Universit?t Wien, Austria
高質(zhì)量磷化銦和銻化鎵襯底制備技術(shù)進(jìn)展及批量生產(chǎn)Progress in Preparation Technology and Batch Production of High Quality InP and GaSb Substrates趙有文珠海鼎泰芯源晶體有限公司董事長ZHAO YouwenChairman of Zhuhai DT Wafer-Tech Co.,lTD
全天LED照明光譜對(duì)人類白天和夜間表現(xiàn)的影響Influence of the spectrum of all-day LED lighting on human daytime and nighttime performance 李諾儀復(fù)旦大學(xué)LI Nuoyi Fudan University
GaN半導(dǎo)體垂直腔面激光器的仿真設(shè)計(jì)與分析Simulation Design and Analysis of GaN Semiconductor Vertical Cavity Surface Laser張紫輝河北工業(yè)大學(xué)教授ZHANG ZihuiProfessor of Hebei University of Technology
