技術(shù)分論壇: 氮化鎵功率電子器件

Technical Sub-Forum: Technologies for GaN Power Electronics Devices

時(shí)間：2023年11月29日13:30-17:30

地點(diǎn)：廈門(mén)國(guó)際會(huì)議中心酒店 • 大同廳

Time: Nov 29, 13:30-17:30

Location: Xiamen International Conference Center • Datong Hall

協(xié)辦支持/Co-organizer:

三安光電股份有限公司  San’an Co.,ltd

中微半導(dǎo)體設(shè)備（上海）股份有限公司   Advanced Micro-Fabrication Equipment Inc. China（AMEC）

屏幕尺寸 / Slides Size：16:9

主持人

張波/ZHANG Bo

電子科技大學(xué)集成電路研究中心主任/教授

Profssor, University of Electronic Science and Technology of China

陳敬/CHEN Jing  

香港科技大學(xué)講席教授

Chair Professor, Department of Electronic and Computer Engineering、the Hong Kong University of Science and Technology

吳偉東/Wai Tung NG  

加拿大多倫多大學(xué)教授、多倫多納米制造中心主任

Director and Professor , Toronto Nanofabrication Centre, University of Toronto

13:25-13:30

嘉賓致辭 / Opening Address

13:30-13:50

GaN基單片電子器件的集成互補(bǔ)金屬氧化物半導(dǎo)體D模和E模高電子遷移率晶體管

GaN-based monolithic electronics integrated using complementary metal-oxide-semiconductor D-mode and E-mode high-electron mobility transistors

李清庭--臺(tái)灣元智大學(xué)前副校長(zhǎng)、臺(tái)灣成功大學(xué)特聘教授

Ching-Ting LEE--Distinguish professor of Cheng Kung University, Twaiwan

13:50-14:10

GaN濺射技術(shù)進(jìn)展

Progress of sputtering technology in GaN

牛山史三--日本愛(ài)發(fā)科株式會(huì)社首席技術(shù)官

USHIYAMA Fumitada--CTO of ULVAC Co.,ltd

14:10-14:30

高性能Si基GaN器件和Ga2O3器件研究進(jìn)展

Research progress in high-performance Si-based GaN devices and Ga2O3 devices

于洪宇--南方科技大學(xué)深港微電子學(xué)院院長(zhǎng)、教授

YU Hongyu--Professor & Dean of The School of Microelectronics, Southern University of Science and Technology

14:30-14:50

氮化鎵功率半導(dǎo)體在中高壓領(lǐng)域的進(jìn)展

Progress of GaN power semiconductors in the medium and high voltage field

黎子蘭--廣東致能科技有限公司總經(jīng)理

LI Zilan--General Manager of GuangDong Ziener Technology Co.,Ltd

14:50-15:10

用于電源應(yīng)用的橫向和垂直GaN器件開(kāi)發(fā)

Lateral and Vertical GaN device development for power applications

游淑珍--西安電子科技大學(xué)教授

YOU Shuzhen--Professor of Xidian University

15:10-15:35

GaN基Buck-Boost LLC變換器的功率補(bǔ)償瞬態(tài)響應(yīng)控制策略

A Transient Response Control Strategy with Power Compensation for GaN-based Buck-Boost LLC Converters

劉琦--加拿大多倫多大學(xué)

LIU QI--University of Toronto 

15:35-15:50

茶歇 / Coffee Break

15:50-16:10

GaN MEMS/NEMS應(yīng)變調(diào)控諧振器

GaN MEMS/NEMS resonator through strain engineering

桑立雯--日本國(guó)立材料研究所獨(dú)立研究員

SANG Liwen--Independent Scientist of National Institute for Materials Science (NIMS), Japan

16:10-16:25

增強(qiáng)型功率氮化鎵器件結(jié)構(gòu)設(shè)計(jì)進(jìn)展

Progress in Structural Design of Enhanced-Mode Power GaN Devices

朱仁強(qiáng)--成都氮矽科技有限公司器件設(shè)計(jì)總監(jiān)

ZHU Renqiang--Design Director of Chengdu DanXi Technology Co.,Ltd

16:25-16:40

基于電子模式GaN的MIS-HEMTS中的工藝和可靠性問(wèn)題

Process and Reliability Issues in E-Mode GaN-based MIS-HEMTS

黃火林--大連理工大學(xué)教授

HUNAG Huolin--Professor of Dalian University of Technology

16:40-16:55

具復(fù)合柵極和階梯結(jié)構(gòu)的新型GaN垂直晶體管研究

Research on a Novel GaN Vertical Transistor with Composite Gate and Stepped Structure

尹以安--華南師范大學(xué)研究員

YIN Yi'an--Professor of South China Normal University

16:55-17:10

低成本垂直GaN功率器件 Low-Cost Vertical GaN Power Devices

劉新科--深圳大學(xué)副教授

LIU Xinke--Associate Professor of Shenzhen University

17:10-17:25

原位N2或H2/N2等離子體預(yù)處理全凹柵增強(qiáng)型LPCVD-Si3N4/PELD-AlN/GaN-MIS-HEMT中陷阱態(tài)的研究

Investigation of the Trap States in Fully-Recessed Normally off LPCVD-Si3N4/PEALD-AlN/GaN MIS-HEMT with in-Situ N2 or H2/N2 Plasma Pretreatment

陶明--湖南大學(xué)電氣與信息工程學(xué)院助理教授

TAO Ming--Assistant Professor,College of Electrical and Information Engineering, Hunan University

17:25-17:40

耗盡型AlGaN/GaN HEMT器件的氫效應(yīng)及可靠性研究

A Study on The Hydrogen Effect and Reliability of a Depletion-Mode AlGaN/GaN HEMT Device

王傳舉--沙特國(guó)王科技大學(xué)

ChuanJu Wang--King Abdullah University of Science and Technology

17:40-17:55

NiO/AlGaN界面載流子輸運(yùn)與高壓RESURF p-NiO/AlAlGaN/GaN HEMT

Carrier transport at NiO/AlGaN interface and high voltage RESURF p-NiO/AlGaN/GaN HEMTs

郭慧--南京大學(xué)

GUOHui--Nanjing University

17:55-18:10

適用于48V應(yīng)用，具有25至250°C的高溫靈敏度,單片GaN雙管溫度傳感器，Monolithic GaN Two-Transistor Temperature Sensor with high Temperature Sensitivity from 25 to 250 °C for 48 V applications

李昂--西交利物浦大學(xué)

LI Ang--Xi'an Jiaotong-Liverpool University