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  • Lars SAMUELSON院士:
    實(shí)現(xiàn)超小型全氮化微型LED的納米級材料科學(xué)Nanometer-scale Materials Science Enabling Ultra-small All-Nitride Micro-LEDsLarsSAMUELSON瑞典皇家科學(xué)院及工程院兩院院士、中國科學(xué)院外籍院士、瑞典德隆大學(xué)教授、南方科技大學(xué)講席教授LarsSamuelsonMember of Royal Swedish Academy of Engineering, Member of Royal Swedish Academy of Sciences，F(xiàn)oreign Member of the Chinese Academy of Sciences, Professor of Lund Univer
    322300
    SSLCHINA2025-01-09 15:47
  • 北京大學(xué)理學(xué)部副主任
    基于大失配外延的氮化物第三代半導(dǎo)體材料與器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大學(xué)理學(xué)部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University
    322700
    IFWS2025-01-09 15:42
  • 中國科學(xué)院院士楊德仁
    半導(dǎo)體材料產(chǎn)業(yè)的現(xiàn)狀和挑戰(zhàn)Status and Challenge of Semiconductor Material Industry楊德仁中國科學(xué)院院士、浙大寧波理工學(xué)院校長、浙江大學(xué)硅及先進(jìn)半導(dǎo)體材料全國重點(diǎn)實(shí)驗(yàn)室主任、教授YANG DerenAcademician of Chinese Academy of Sciences,President of NingboTech University, Professor and Director of State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University
    332700
    IFWS2025-01-09 15:31
  • 材料科學(xué)姑蘇實(shí)驗(yàn)室研
    基于納米壓印全生態(tài)產(chǎn)業(yè)平臺的微納光學(xué)器件制造Manufacturing of Micro and Nano Optical Devices Based on Nanoimprint Eco-industrial Platform羅剛材料科學(xué)姑蘇實(shí)驗(yàn)室研究員、蘇州新維度微納科技有限公司創(chuàng)始人LUO GangProfessor of Gusu Lab, Founderof NDnano
    55700
    SSLCHINA2025-01-09 15:17
  • 中科重儀半導(dǎo)體聯(lián)合創(chuàng)
    GaN基光電材料外延與MOCVD反應(yīng)腔結(jié)構(gòu)關(guān)聯(lián)性研究Research on the Correlation Between GaN-based Optoelectronic Material Epitaxy and MOCVD Reactor Chamber Structure姚威振中國科學(xué)院半導(dǎo)體研究所副研究員、中科重儀半導(dǎo)體聯(lián)合創(chuàng)始人YAO WeizhenAssociate Professor of Institute of Semiconductors, Chinese Academy of Sciences, Co-founder of CASInstruments Semiconductor Co., Ltd.
    21200
    IFWS2025-01-09 14:42
  • 中科院蘇州納米所研究
    硅襯底GaN基光電材料外延生長Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孫錢中國科學(xué)院蘇州納米技術(shù)與納米仿生研究所研究員SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
    55400
    IFWS2025-01-09 14:41
  • 日本NTT基礎(chǔ)研究實(shí)驗(yàn)
    氮化鋁基半導(dǎo)體材料及器件的最新進(jìn)展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基礎(chǔ)研究實(shí)驗(yàn)室負(fù)責(zé)人、資深杰出研究員Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation
    45600
    IFWS2025-01-09 14:25
  • 中電科四十六所新材料
    氮化鋁單晶材料研究進(jìn)展與應(yīng)用展望Research Progress and Application Prospect of AlN Single Crystal Materials程紅娟中國電子科技集團(tuán)第四十六所新材料研發(fā)中心副主任CHENG HongjuanDeputy Director of New Materials Research and Development Center of CETC 46THInstitute
    55300
    IFWS2025-01-09 14:21
  • 艾姆希半導(dǎo)體銷售總監(jiān)
    第四代半導(dǎo)體材料平坦化研究進(jìn)展Research Progress on Planarization of Fourth Generation Semiconductor Materials趙志強(qiáng)北京艾姆希半導(dǎo)體科技有限公司銷售總監(jiān)ZHAO ZhiqiangSales Director of MCF Technologies Ltd.
    55600
    IFWS2025-01-09 14:07
  • 哈爾濱工業(yè)大學(xué)（深圳
    氧化鎵材料和電子器件的熱特性Thermal Characteristics of Ga2O3Materials and Electronic Devices孫華銳哈爾濱工業(yè)大學(xué)（深圳）教授，理學(xué)院副院長SUN HuaruiProfessor of Harbin Institute of Technology, Shenzhen
    55400
    IFWS2025-01-09 13:56
  • 山東大學(xué)新一代半導(dǎo)體
    電流/功率截止頻率為135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鵬山東大學(xué)新一代半導(dǎo)體材料研究院研究員CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University
    109500
    guansheng2023-05-22 15:20
  • 中科院寧波材料所戴貽
    無等離子體損傷GaN HEMT極化隔離的設(shè)計(jì)與優(yōu)化Design and optimization of polarization isolation toward plasma-damage-free GaN HEMT戴貽鈞中國科學(xué)院寧波材料技術(shù)與工程研究所DAI YiyunNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
    68800
    guansheng2023-05-22 15:13
  • 東南大學(xué)下一代半導(dǎo)體
    全色顯示材料與3D芯片集成技術(shù)Integrated technology of panchromatic display materials and 3D chips范謙東南大學(xué)下一代半導(dǎo)體材料研究所研究員
    60900
    guansheng2023-05-22 14:10
  • 湖北大學(xué)材料科學(xué)與工
    基于HfZrO2與b-Ga2O3異質(zhì)結(jié)的高性能自驅(qū)動(dòng)日盲紫外光探測器P-Type SnO2 Fabrication and Construction of SnO2 Homojunction UV Photodetector黎明鍇湖北大學(xué)材料科學(xué)與工程學(xué)院教授LIMingkaiProfessor of Hubei University
    80700
    guansheng2023-05-19 15:03
  • 中科院寧波材料所研究
    微米級氧化鎵厚膜的載流子定向輸運(yùn)與深紫外光電探測Directional carrier transport in micrometer-thick gallium oxide films for high-performance deep-ultraviolet photodetection張文瑞中科院寧波材料所研究員Zhang WenruiProfessor Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
    93600
    guansheng2023-05-19 15:02
  • 中山大學(xué)佛山研究院院
    新型寬禁帶壓電半導(dǎo)體材料-Ga2O3及其在射頻諧振器中的應(yīng)用-Ga2O3: an Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators王鋼中山大學(xué)佛山研究院院長，中山大學(xué)半導(dǎo)體照明材料及器件國家地方聯(lián)合工程實(shí)驗(yàn)室主任、教授WANG GangProfessor and Dean of Foshan Institute of Sun Yat-Sen University; Director of the National-Local Joint Engineering Laboratory of Semiconductor
    138200
    guansheng2023-05-19 14:17
  • 康美特首席技術(shù)官徐建
    背光模組中Mini LED對封裝材料的要求與挑戰(zhàn)Requirements and Challenges for Packaging Materials for Mini LEDs used in Backlight Modules徐建軍北京康美特科技股份有限公司首席技術(shù)官Jianjun XUCTO of Beijing KMT Technology Co., Ltd.
    91800
    guansheng2023-05-19 11:54
  • 博湃半導(dǎo)體市場銷售總
    用于先進(jìn)SiC功率模塊的整體解決（核心設(shè)備/材料/工程）方案Overall solution (core equipment/materials/engineering) for advanced SiC power module周鑫蘇州博湃半導(dǎo)體技術(shù)有限公司市場銷售總監(jiān)ZHOU XinDirector of Sales Marketing, Suzhou Bopai Semiconductor Technology Co., Ltd.
    84300
    guansheng2023-05-19 09:04
  • 江蘇第三代半導(dǎo)體研究
    高性能GaN-on-GaN材料與器件的外延生長High output power and bandwidth of c-plane GaN-on-GaN micro-LED for high-speed visible light communication王國斌江蘇第三代半導(dǎo)體研究院研發(fā)部負(fù)責(zé)人WANG GuobinSenior Project ManagerHead of RD Dept of Jiangsu Institute of Advanced Semiconductors
    129000
    guansheng2023-05-19 08:56
  • 中國科學(xué)院半導(dǎo)體所研
    平片藍(lán)寶石襯底上高質(zhì)量AlN材料MOCVD外延生長High quality AlN growth on flat sapphire at relative low temperature by MOCVD趙德剛中國科學(xué)院半導(dǎo)體所研究員ZHAO DegangProfesor of Institute of Semiconductors, CAS
    70900
    guansheng2023-05-18 16:19
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