硅襯底GaN基光電材料外延生長Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孫錢中國科學(xué)院蘇州納米技術(shù)與納米仿生研究所研究員SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
6英寸復(fù)合襯底上厚GaN外延生長研究Growth of Thick GaN Epilayers on 150mm Engineered Substrate韓穎中國電子科技集團(tuán)第十三所高級工程師HAN YingSenior Engineer of Hebei Semiconductor Research Institute
基于InGaN基硅襯底Micro-LED的多色集成轉(zhuǎn)移印刷技術(shù)Transfer printing technology based on InGaN-based silicon substrate micro-LEDs for multicolor integration田朋飛復(fù)旦大學(xué)副教授TIAN Pengfei Associate Professor of Fudan University
藍(lán)寶石襯底InGaN基紅色LED及MicroLEDInGaN based red LEDs and MicroLEDs on sapphire substrate王新強(qiáng)北京大學(xué)教授、北大東莞光電研究院院長WANG XinqiangDean of Dongguan Institute of Opto-electronics, Peking University
高質(zhì)量磷化銦和銻化鎵襯底制備技術(shù)進(jìn)展及批量生產(chǎn)Progress in Preparation Technology and Batch Production of High Quality InP and GaSb Substrates趙有文珠海鼎泰芯源晶體有限公司董事長ZHAO YouwenChairman of Zhuhai DT Wafer-Tech Co.,lTD
高品質(zhì)磷化銦襯底對激光器性能影響研究Effect of High Quality InP Substrate on Laser Performance惠峰云南鍺業(yè)公司首席科學(xué)家、云南鑫耀半導(dǎo)體材料有限公司總經(jīng)理HUI FengChief Scientist of Yunan Germanium Co.,ltd
利用高Al組分-(AlGa)2O3緩沖層在藍(lán)寶石襯底上優(yōu)化生長高質(zhì)量-Ga2O3厚膜Growth of high quality - Ga2O3 thick film on sapphire by using high Al content - (AlGa)2O3 buffer layer張赫之大連理工大學(xué)副教授ZHANG HezhiAssociate professor of Dalian University of Technology
用于Micro LED芯片規(guī)模量產(chǎn)化的化學(xué)剝離生長襯底技術(shù)Chemical Peel Growth Substrate Technology for Mass Production of Micro LED Chips郝茂盛上海芯元基半導(dǎo)體科技有限公司總經(jīng)理HAO MaoshengGeneral Manager of Shanghai Chipfoundation Semiconductor Technology Co., Ltd.
利用AlN傳導(dǎo)層在GaN襯底上外延生長金剛石薄膜及其熱傳輸特性Thermal dissipation from GaN to diamond with AlN conduction layer桑立雯日本國立物質(zhì)材料研究所獨(dú)立研究員SANG LiwenIndependent Scientist of National Institute for Materials Science (NIMS), Japan
平片藍(lán)寶石襯底上高質(zhì)量AlN材料MOCVD外延生長High quality AlN growth on flat sapphire at relative low temperature by MOCVD趙德剛中國科學(xué)院半導(dǎo)體所研究員ZHAO DegangProfesor of Institute of Semiconductors, CAS
基于HVPE-Ga2O3氮化的GaN襯底技術(shù)The preparation of GaN based on the nitridation of HVPE-Ga2O3 films修向前南京大學(xué)教授XIU Xiangqian-Professor of Nanjing university
應(yīng)用于垂直器件的高電導(dǎo)率GaN單晶襯底制HVPE Growth of Bulk GaN with High Conductivity for Vertical Devices王建峰蘇州納維科技有限公司總經(jīng)理WANG JianfengGeneral Manager of Suzhou Nanowin Science and Technology Co., Ltd
